2SC1946A
Silicon NPN Transistor
Final RF Power Output in VHF band mobile radio application.

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The 2SC1946A is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers.

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Features:


Application:

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO 17V
Collector-Base Voltage, VCBO 35V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 7A
Collector Power Dissipation (TA = +25°C), PD 3W
Collector Power Dissipation (TC = +50°C), PD 50W
Operating Junction Temperature, TJ +175°C
Storage Temperature Range, Tstg -55° to +175°C
Thermal Resistance, Rth-c 3°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 2 mA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 1 mA
DC Forward Current Gain hFE VCE = 10V, IC = 0,2A, Note 1 10 50 180  
Power Output PO VCC = 13,5V, Pin = 6W, f = 175MHz 30 35 - W
Collector Efficiency   60 70 - %
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.

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